Please use this identifier to cite or link to this item: http://13.232.72.61:8080/jspui/handle/123456789/2057
Title: Diffuse reflectance properties and bandgap analysis of Mg2SiO4:RE3+ (RE= Eu, Tb, Sm, Dy) nanophosphors for light emitting device application
Authors: Naik, R.
Prashantha, S. C.
Nagabhushana, H.
Nagaswarupa, H. P.
Jnaneshwara, D. M.
Devaraja, P. B.
Darshan, G. P.
Keywords: Bandgap analysis
Light emitting device
Nanophosphors
Issue Date: 2017
Publisher: AIP Publishing
Citation: Naik, R., Prashantha, S. C., Nagabhushana, H., Nagaswarupa, H. P., Jnaneshwara, D. M., Devaraja, P. B., & Darshan, G. P. (2017, May). Diffuse reflectance properties and bandgap analysis of Mg2SiO4: RE3+ (RE= Eu, Tb, Sm, Dy) nanophosphors for light emitting device application. In AIP Conference Proceedings (Vol. 1832, No. 1, p. 050035). AIP Publishing
Abstract: RE3+(RE= Eu, Tb, Sm, Dy) doped Mg2SiO4 nanophosphors were analysed under Diffuse Reflectance Spectral (DRS) studies. The variations of absorption peaks for all different dopants at different wavelengths have been discussed. The effect of concentration on absorption edges also been discussed. Further the bandgap analysis of RE3+ doped Mg2SiO4 nanophosphors were carried out using Kubelka-Munk (K-M) function. The absorption wavelengths obtained for different samples are used as excitation wavelength to get emission of light in different region so that the phosphors are used for light emitting device applications.
URI: http://13.232.72.61:8080/jspui/handle/123456789/2057
Appears in Collections:Faculty of Science

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